Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park The eight-member family offers densities

The eight-member family offers densities ranging from 50

5V when using the internal reference

Xiilnx FPGA Part #XC7K410T-1FBG900C

DKx#) and output data clocks (QKx

5C50Z44709

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park The eight-member family offers densitiesMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E IT: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ