Micron Technology DRAM , Part #MT41K128M16JT-125 XIT:K TR | Dynamic random access memory | DEX 14"-15" Vishay Discreet Semiconductor Part #VS-U5FX300FA60

Vishay Discreet Semiconductor Part #VS-U5FX300FA60

mode selection and output short circuit protection

1700V 450A 3-PHASE FS450R17KE3 W/DRIVER 2250W

UC3825ADWTRG4

Xilinx FPGA Part #XC7Z020-3CLG400E

Micron Technology DRAM , Part #MT41K128M16JT-125 XIT:K TR | Dynamic random access memory | DEX 14"-15" Vishay Discreet Semiconductor Part #VS-U5FX300FA60Micron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 125 XIT: K TR Features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)